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Electrical Engineering | Materials Science | Renewable Energy
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Engineering | Natural Science
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English
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Electrical Engineering Program at Indian Institute of Technology Bombay

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EE 757: Crystalline Silicon Solar Cells - Theory and Practice

Course Details

Latest Semester

2021-Autumn


Programs

PG


Latest Instructor

Anil Kottantharayil


Substitutions

Not Applicable


Course Modules

Module 1

Theory: Brief review of semiconductor device physics - band structure - carrier concentrations - carrier generation and recombination - effective lifetime and surface recombination velocity - carrier transport - optical absorption and reflection. Practice:


  • Measurement of sheet resistance of a silicon wafer - determination of the type of wafer - estimation of the mobility and diffusion coefficient of the majority carriers
  • Measurement of carrier lifetime and surface recombination velocity
  • Measurement of reflectivity of a polished silicon surface

Module 2

Theory: p-n junction diodes - derivation of dark IV characteristics including surface recombination - illuminated IV characteristics - contacts - series resistance in solar cells - shunts in solar cells. Practice:


  • Simulation of dark and illuminated IV characteristics of PN junction diodes using PC1D
  • Analysis of Fermi levels, potential, electric field and carrier distributions, generation and recombination rates within the diode
  • Simulation of illuminated characteristics using measured reflectance data
  • Leakage currents the impact of various parameters like carrier lifetime, surface recombination, and semiconductor thickness on carrier distributions, recombination currents and dark and illuminated IV of the diode, the impact of the above on solar cell performance parameters (Isc, Voc, FF, efficiency)

Module 3

Theory: wet clean and etch processes - Diffusion in silicon - plasma etching - thin film growth and deposition (oxidation, PECVD, ALD, evaporation), screen printing process - laser processes for silicon solar cell fabrication. Practice:


  • Texturization of silicon surface using KOH, measurement of reflectance, observation of the surface using optical microscope and assessment of pyramid size and distribution, review of device simulation using the measured reflectance data
  • Phosphorous diffusion using POCl3, design of diffusion process - experiment, sheet resistance measurements - edge isolation process using plasma etching
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