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Electrical Engineering Program at Indian Institute of Technology Bombay

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EE 666 - High Power Semiconductor Devices

Course Description

Basic device models: Theory of bipolar and MOS transistors. Small-signal models of bipolar and MOS transistors, Gummel-Poon model; High current effects in diodes: Dependence of lifetime on high-level injection, non-uniform current distribution under high current injection; Power bipolar transistors: Onset of high-current effects in transistors; Theories of Kirk effect, crowding, pinch-in effects, second breakdown, etc; Emitter geometries for high current and HF operation; SCR: Theories of operation; Relation between the shorted emitter and DV/DT ratings; Gate turn-off devices, inverter grade SCRs, special diffusion techniques for SCRs. Power VMOS devices; Heat transfer in power devices; Power MOS devices: VMOS & DMOS device structure and models; device packaging.

Latest Semester

Programs

• PG

Latest Instructor

Substitutions

Not Applicable